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4600 silicon drive | durham, nc 27703 | www.wolfspeed.com rev. 08, 2018-05-19 all published data at t case = 25c unless otherwise indicated esd: electrostatic discharge sensitive deviceobserve handling precautions! 40 -35 -30 -25 -20 -15 -10 20 25 30 35 40 45 50 d 3 (dbc) e d efficiency (%) two-tone drive-up v dd = 28 v, i dq1 = 70 ma, i dq2 = 90 ma ? = 920, 940, 960 mhz pae imd3 -60 -55 -50 -45 - 40 0 5 10 15 20 27 29 31 33 35 37 39 41 43 im d power add e average output power ( dbm ) 920 mhz 940 mhz wideband rf ldmos integrated power amplifer 15 w, 28 v, 700 C 1000 mhz description the PTMA080152m is a wideband, on chipCmatched, 15-watt, 2-stage ldmos integrated power amplifer intended for wideband driver applications in the 700 to 1000 mhz frequency range. it is of - fered in a 20-lead thermally-enhanced overmolded package for cool and reliable operation. PTMA080152m package pg-dso-20-63 rf characteristics gsm/edge characteristics (not subject to production testverifed by design/characterization in wolfspeed test fxture) v dd = 28 v, i dq1 = 70 ma, i dq2 = 120 ma, ? = 920 to 960 mhz, p out = 8 w avg. characteristic symbol min typ max unit input return loss irl C15 db gain g ps 30 db power added efficiency pae 34 % error vector magnitude evm (rms) 1.5 % table continued next page features ? broadband on-chip matching, 50-ohm input and ~10 -ohm output ? typical gsm/edge performance at 28 v, 920 to 960 mhz - gain = 30 db - effciency = 34% at 8 w output power - evm @ 8 w = 1.5% - acpr @ 400 khz = C61 dbc - acpr @ 600 khz = C75 dbc ? typical cw performance, 940 mhz, 28 v - output power at p 1db = 20 w - effciency = 49% ? integrated esd protection. meets hbm class 1b (minimum), per jesd22-a114f. ? excellent thermal stability, low hci drift ? capable of handling 10:1 vswr @ 28 v, 20 w (cw) output power ? rohs-compliant package PTMA080152m
4600 silicon drive | durham, nc 27703 | www.wolfspeed.com rev. 08, 2018-05-19 2 PTMA080152m rf characteristics (cont.) gsm/edge characteristics (cont.) v dd = 28 v, i dq1 = 70 ma, i dq2 = 120 ma, ? = 920 to 960 mhz, p out = 8 w avg. characteristic symbol min typ max unit modulation spectrum 400 khz offset acpr1 C61 dbc 600 khz offset acpr2 C75 dbc spurs load 3:1 C60 dbc gain flatness ?g 0.2 db two-tone measurements (tested in wolfspeed test fixture) v dd = 28 v, i dq1 = 70 ma, i dq2 = 90 ma, p out = 8 w avg., ? = 940 mhz, tone spacing = 1 mhz characteristic symbol min typ max unit gain g ps 29 30 db drain efficiency h d 32.5 33.5 % third order intermodulation distortion imd3 C34 C31 dbc dc characteristics stage 1 characteristics conditions symbol min typ max unit drain leakage current v ds = 28 v, v gs = 0 v i dss 1.0 a v ds = 63 v, v gs = 0 v i dss 10.0 a gate leakage current v gs = 10 v, v ds = 0 v i gss 1.0 a on-state resistance v gs = 10 v, v ds = 0.1 v r ds(on) 3.48 ? operating gate voltage v ds = 28 v, i dq1 = 70 ma, v gs 2.0 2.5 3.0 v stage 2 characteristics conditions symbol min typ max unit drain-source breakdown voltage v gs = 0 v, i ds = 10 ma v (br)dss 65 v drain leakage current v ds = 28 v, v gs = 0 v i dss 1.0 a v ds = 63 v, v gs = 0 v i dss 10.0 a gate leakage current v gs = 10 v, v ds = 0 v i gss 1.0 a on-state resistance v gs = 10 v, v ds = 0.1 v r ds(on) 0.6 ? operating gate voltage v ds = 28 v, i dq2 = 90 ma v gs 2.0 3.0 v
4600 silicon drive | durham, nc 27703 | www.wolfspeed.com rev. 08, 2018-05-19 3 PTMA080152m maximum ratings parameter symbol value unit drain-source voltage v dss 65 v gate-source voltage v gs C0.5 to +12 v junction temperature t j 200 c input power p in 15 dbm total device dissipation p d 91 w above 25c derate by 0.52 w/c storage temperature range t stg C40 to +150 c overall thermal resistance (t case = 70c) stage 1 r jc 8.5 c/w p out = 15 w, i dq1 = 70 ma, i dq2 = 90 ma stage 2 r j0c 2.5 c/w moisture sensitivity level level test standard package temperature unit 3 ipc/jedec j-std-020 260 c ordering information type and version order code package and description shipping PTMA080152m v1 r500 PTMA080152m-v1- r500 pg-dso-20-63, molded plastic tape & reel, 500 pcs
4600 silicon drive | durham, nc 27703 | www.wolfspeed.com rev. 08, 2018-05-19 4 PTMA080152m typical performance (data taken in wolfspeed production test fixture) -20 -16 -12 -8 -4 0 12 16 20 24 28 32 t urn loss (db) gain (db) broadband performance v dd = 28 v, i dq1 = 70 ma, i dq2 = 90 ma, fixture tuned for 920 C 960 mhz gain return loss -32 -28 -24 0 4 8 750 800 850 900 950 1000 1050 1100 1150 re t frequency (mhz) cw performance v = 28 v i = 70 ma i = 90 ma 60 65 30 32 v dd = 28 v , i dq1 = 70 ma , i dq2 = 90 ma ? = 920 , 940, 960 mhz 40 45 50 55 60 22 24 26 28 30 e fficiency(%) (db) gain 920 mhz 940 mhz 20 25 30 35 14 16 18 20 ower added e gain ( pae 940 mhz 960 mhz 10 15 10 12 29 31 33 35 37 39 41 43 45 p output power (dbm) 3 4 5 6 7 8 9 10 15 20 25 30 35 40 45 50 v ector magnitude (%) d ded efficiency (%) edge - evm v dd = 28 v, i dq1 = 70 ma, i dq2 = 120 ma, ? = 942.6 mhz pae 90 c C25 c 25 c 0 1 2 3 0 5 10 15 30 31 32 33 34 35 36 37 38 39 40 41 42 error v power a output power (dbm) evm edge - evm v dd = 28 v, i dq1 = 70 ma, i dq2 = 120 ma, series are at selected fre q uencies 9 10 45 50 ) ) q 925.2 mhz 942 6 mh 6 7 8 30 35 40 g nitude (% ) f iciency (% ) evm 942 . 6 mh z 959.8 mhz 3 4 5 15 20 25 v ector ma g r added ef f evm pae 0 1 2 0 5 10 error v powe r 30 31 32 33 34 35 36 37 38 39 40 41 42 output power (dbm)
4600 silicon drive | durham, nc 27703 | www.wolfspeed.com rev. 08, 2018-05-19 5 PTMA080152m typical performance (cont.) edge modulation spectrum performance v dd = 28 v i dq1 = 70 ma i dq2 = 120 ma -35 50 v dd 28 v , i dq1 70 ma , i dq2 120 ma , series show ? = 942.6 mhz, at selected temperatures -45 40 m (dbc) e ncy (%) pae 90 c C25 c 25 c -65 -55 20 30 o n spectru d ed effici e -75 10 modulati o p ower ad d 400 khz 600 kh -85 0 30 32 34 36 38 40 42 p output power (dbm) 600 kh z 75 -70 -65 -60 -55 -50 -45 -40 -35 10 15 20 25 30 35 40 45 50 d ulation spectrum (dbc) e r added efficiency (%) edge modulation spectrum performance v dd = 28 v, i dq1 = 70 ma, i dq2 = 120 ma, series are at selected frequencies pae 400 khz 925.2 mhz 942.6 mhz 959.8 mhz -85 -80 - 75 0 5 10 30 32 34 36 38 40 42 mo d pow e output power (dbm) 600 khz gate C source voltage vs. temperature v dd = 28 v, i dq1 = 70 ma, i dq2 = 90 ma 1.15 t age v 1.05 1.10 o urce vol t v v gs1 v gs2 0 9 1.00 g ate C s o h reshold), slope = C 1.3 mv/c 0.90 0 . 9 5 m alized g (t h 0.85 -30 -10 10 30 50 70 90 nor m t t ( c) t empera t ure ( c)
4600 silicon drive | durham, nc 27703 | www.wolfspeed.com rev. 08, 2018-05-19 6 PTMA080152m 0 . 1 0 . 3 0 . 5 0 . 2 0 . 4 0 . 1 0 . 3 0 . 2 0 . 4 0 . 1 0 . 3 0 . 2 0 . 4 - w a v e l e n g t h s t o w a r d g e n e r a t o r - - - > 0 . 0 5 0 . 4 5 0 . 0 5 0 . 4 5 < - - - w a v e l e n g t h s t o w a r d l o a d - 0 . 0 700 mhz 1000 mhz z load z 0 = 50 ? frequency z load ? mhz r jx 700 10.6 C4.3 720 10.1 C3.7 740 9.8 C3.1 760 9.5 C2.4 780 9.2 C1.8 800 9.0 C1.2 820 8.8 C0.5 840 8.7 0.1 860 8.6 0.8 880 8.5 1.4 900 8.5 2.1 920 8.5 2.8 940 8.5 3.5 960 8.6 4.3 980 8.7 5.0 1000 8.8 5.8 broadband circuit impedance see next page for reference circuit information
4600 silicon drive | durham, nc 27703 | www.wolfspeed.com rev. 08, 2018-05-19 7 PTMA080152m reference circuit schematic for ? = 940 mhz circuit assembly information dut PTMA080152m, ldmos ic reference fixture part no. ltn/PTMA080152m pcb 0.76 mm [.030"] thick, r = 3.48, rogers ro4350, 1 oz. copper find gerber fles for this reference fxture on the wolfspeed web site at ( www.wolfspeed.com/rf ) microstrip electrical characteristics at 940 mhz 1 l x w (mm) l x w (in.) l 1 0.017 , 50.0 ? 3.00 x 1.70 0.118 x 0.067 l 2 0.143 , 50.0 ? 24.71 x 1.70 0.973 x 0.067 l 3 0.024 , 10.6 ? 4.09 x 12.70 0.161 x 0.500 l 4 0.144 , 59.0 ? 24.77 x 1.30 0.975 x 0.051 l 5 0.044 , 34.0 ? 7.57 x 3.02 0.298 x 0.119 l 6 0.044 , 44.0 ? 8.33 x 2.11 0.328 x 0.083 l 7 0.0702 , 44.0 ? 12.12 x 2.11 0.477 x 0.083 l 8 0.030 , 44.0 ? 5.18 x 2.11 0.204 x 0.083 reference circuit c 18 10 f c 16 0 . 1 f c 15 47 pf c 17 1 f c 19 100 f 50 v v d 2 l 3 l 4 c 22 33 pf l 5 l 6 c 21 5 . 6 pf l 7 l 8 j 2 ptma 080152 m dut c 14 47 pf c 10 47 pf c 12 1 f c 8 1 f j 1 c 7 10 f c 11 10 f c 9 0 . 1 f c 13 0 . 1 f l 1 v d 1 c 1 100 f 50 v c 2 10 f c 3 1 f c 6 1 pf l 2 c 4 0 . 1 f c 5 47 pf r 1 0 q 1 v g 1 r 2 0 ? q 2 r 4 g 2 v c 20 2 . 2 pf a 0 8 0 1 5 2 m _ b d _ 8 - 2 2 - 1 1 ? 2 k ? variable r 3 2 k ? variable 5 10 9 7 8 6 1 3 4 2 16 11 12 13 14 15 17 18 19 20
4600 silicon drive | durham, nc 27703 | www.wolfspeed.com rev. 08, 2018-05-19 8 PTMA080152m component description suggested manufacturer p/n or comment c3, c8, c12, c17 ceramic capacitor, 1 f digi-key 445-1411-2-nd c4, c9, c13, c16 capacitor, 0.1 f digi-key pcc104bct-nd c2, c7, c11, c18 tantalum capacitor, 10 f, 50 v digi-key p5571-nd c1, c19 electrolytic capacitor, 100 f, 50 v digi-key pce3718ct-nd c6 ceramic capacitor, 1.0 pf atc 600s 1ro ct c20 ceramic capacitor, 2.2 pf atc 600s 2r2 ct c21 ceramic capacitor, 5.6 pf atc 600s 5r6 ct c22 ceramic capacitor, 33 pf atc 600s 330 jt c5, c10, c14, c15 ceramic capacitor, 47 pf atc 600s 470 jt q1, q2 transistor infneon technologies bcp56 r1, r2 chip resistor, 0 ohms digi-key pxxect-nd r3, r4 variable resistor, 2k ohms digi-key 3224w-202etr-nd rf _ out a 0 8 0 1 5 2 m _ cd _ 2 - 1 0 - 0 9 rf _ in v d 1 v d 2 v g 1 v g 2 c 19 c 14 c 18 c 17 c 12 c 13 c 16 c 15 c 1 c 2 c 3 c 4 c 5 c 6 c 7 c 8 c 9 c 10 c 11 c 20 c 21 c 22 r 3 r 4 q 1 r 1 r 2 q 2 reference circuit (cont.) reference circuit assembly diagram (not to scale) PTMA080152m_02a_cus
4600 silicon drive | durham, nc 27703 | www.wolfspeed.com rev. 08, 2018-05-19 9 PTMA080152m pinout diagram (top view) source/ground: plated copper heatslug on backside of package 1 2 3 4 5 6 7 8 9 10 20 19 18 17 16 15 14 13 12 11 a 0 8 0 1 5 2 m _ p d _ 1 0 - 3 1 - 0 8 v dd 1 v dd 1 rf in rf in v g 1 v g 2 nc nc v dd 2 , rf out v dd 2 , rf out v dd 2 , rf out v dd 2 , rf out v dd 2 , rf out v dd 2 , rf out nc nc nc nc nc nc
4600 silicon drive | durham, nc 27703 | www.wolfspeed.com rev. 08, 2018-05-19 10 PTMA080152m package outline specifications package pg-dso-20-63 diagram notesunless otherwise specifed: 1. interpret dimensions and tolerances per asme y14.5m-1994. 2. package dimensions: 11.0 mm by 15.9 mm by 3.35 mm. 3. jedec drawing number: mo-166. 4. does not include plastic or metal protrusion of 0.15 mm max per side. 5. does not include dambar protrusion; maximum allowable dambar protrusion shall be 0.08 mm. 6. bottom metallization. 7. sn plating (matte): 5 C 15 micron [196.85 C 590.55 microinch]. 2 x 2.90 [0. 114 ] max (2 pls) 13. 00 [0. 512 ] max 1 10 11 20 6 . index pin 1 6 . 14 . 20 0.30 11 . 00 [0 . 433 ] 9 x 1 .27 = 11.43 9 x .050 = . 450 1 . 10 [0. 043 ] max (2 pls) 2 . 95 [0. 116 ] 6. 00 [0. 236 ] top view bottom view [0. 559 0. 012 ] 0. 40+0 . 13 [0. 015 + 0. 005 ] 0 .25mm c a b 15. 900.10 [0. 626 0. 004 ] 1. 27 [0 . 050 ] 141 ( 2 pls) top / bottom all sides 11 . 00 0. 10 [0. 433 0. 004 ] 5 . 3. 50 [0. 137 ] max see detail a 4. side view end view m s s 0 . 95 0. 15 [0. 037 0.006 ] 0. 35 [0. 014 ] gauge plane 0. 15 [0. 006 ] ref 0+ 0. 1 [0 +0.004 ] standoff 1. 60 [0. 063 ] ref 0. 25 + 0 .07 C0 .02 [0. 010 ] + 0 .003 C0 .001 detail a pg - dso - 20 - 63 _ po _01 _12 - 07 - 2012 diagram notesCunless otherwise specifed: 1. interpret dimensions and tolerances per asme y14.5m-1994. 2. package dimensions: 11.0 mm by 15.9 mm by 3.35 mm. 3. jedec drawing number : mo-166. 4. does not include plastic or metal protrusion of 0.15 mm max per side. 5. does not include dambar protrusion; maximum allowable dambar protrusion shall be 0.08 mm. 6. bottom metallization. 7. sn plating (matte) : 5 - 15 micron [196.85 C 590.55 microinch].
www.wolfspeed.com rev. 08, 2018-05-19 11 PTMA080152m copyright ? 2018 cree, inc. all rights reserved. the information in this document is subject to change without notice. wolfspeed? and the wolfspeed logo are trademarks of cree, inc. notes disclaimer specifcations are subject to change without notice. cree, inc. believes the information contained within this data sheet to be accurate and reliable. however, no responsibility is assumed by cree for any infringement of patents or other rights of third parties which may result from its use. no license is granted by implication or otherwise under any patent or pat - ent rights of cree. cree makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose. typical parameters are the average values expected by cree in large quantities and are provided for information purposes only. these values can and do vary in diferent applications and actual performance can vary over time. all operating parameters should be validated by customers technical experts for each application. cree products are not designed, intended or authorized for use as components in applications intended for surgical implant into the body or to support or sustain life, in applications in which the failure of the cree product could result in personal injury or death or in applications for planning, construction, maintenance or direct operation of a nuclear facility. for more information, please contact: 4600 silicon drive durham, north carolina, usa 27703 www.wolfspeed.com/rf sales contact rfsales@wolfspeed.com rf product marketing contact rfmarketing@wolfspeed.com 919.407.7816 01 2007-05-05 preliminary all preliminary specifcation for new product in development. 02 2009-02-27 production all revise package information and circuit diagrams, add impedance information. 03 2009-08-31 production 1 revise vswr rating. 04 2010-04-16 production 3; 10 add moisture sensitivity information; update package outline notes. 05 2011-05-17 production 2; 4 revise dc table; remove graph. 06 2011-08-22 production 2; all revise two-tone table; minor updates to graphics and diagrams for readability. 07 2014-05-07 production 3 add shipping option. 08 2018-05-19 production all converted to wolfspeed data sheet revision history

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